PUBLICATION
IEEE Transactions on Materials for Electron Devices (T-MAT)
Call for Papers
Special Issue on the
19th INTERNATIONAL CONFERENCE ON RELIABILITY AND
STRESS-RELATED
PHENOMENA IN NANOELECTRONICS
("STRESS WORKSHOP")
The 19th International Conference Reliability and Stress-related Phenomena in Nanoelectronics ("STRESS WORKSHOP"), will take place in West Lafayette, Indiana – USA, from 28 September-1 October 2026.
This special issue will provide a focused forum for reporting current research on stress-induced phenomena in on-chip metal interconnects, solder joints, and related microelectronic structures. Authors are invited to submit papers on all technological and experimental aspects related to mechanical and electrical stresses and their influence on materials properties and device performance.
Modelling,
Performance and Reliability
| MonthYear1: | July 2026 |
| MonthYear2: | 1st Nov 2026 |
| Publication Year: | 2026 |
Brandenburg University of Technology Cottbus-Senftenberg
Cottbus, Germany
ez@malab.com
University of Florida, Electrical & Computer Engineering
Gainesville, FL, USA
feng@ece.ufl.edu
Korea Advanced Institute of Science and Technology
Daejeon, South Korea
tskim1@kaist.ac.kr
All papers shall undergo the standard IEEE T-MAT peer-review process. Manuscripts must be submitted online, via the IEEE Transactions on Materials for Electron Devices Author portal.
When submitting, please indicate in the "Manuscript Type" roll down menu, and select the name of the intended Special Issue from the dropdown menu. Authors are particularly encouraged to suggest names of potential reviewers for their manuscripts in the space provided for these recommendations in Manuscript Central. For manuscript preparation and submission, please follow the guidelines in the Information for Authors at the IEEE T-MAT Xplore page.